Implant damage free image sensor and method of the same

ABSTRACT

An image sensor is disclosed. The image sensor includes an epitaxial layer, a plurality of plug structures and an interconnect structure. Wherein the plurality of plug structures are formed in the epitaxial layer, and each plug structure has doped sidewalls, the epitaxial layer and the doped sidewalls form a plurality of photodiodes, the plurality of plug structures are used to separate adjacent photodiodes, and the epitaxial layer and the doped sidewalls are coupled to the interconnect structure via the plug structures. An associated method of fabricating the image sensor is also disclosed. The method includes: providing a substrate having a first-type doped epitaxial substrate layer on a second-type doped epitaxial substrate layer; forming a plurality of isolation trenches in the first-type doped epitaxial substrate layer; forming a second-type doped region along sidewalls and bottoms of the plurality of isolation trenches; and filling the plurality of isolation trenches by depositing metal.

BACKGROUND

Semiconductor image sensors are used to sense radiation such as light.Complementary metal-oxide-semiconductor (CMOS) image sensors (CIS) andcharge-coupled device (CCD) sensors are widely used in variousapplications such as digital still camera or mobile phone cameraapplications. These devices utilize an array of pixels in a substrate,including photodiodes and transistors, so as to absorb radiationprojected toward the substrate and convert the sensed radiation intoelectrical signals.

In recent years, the semiconductor integrated circuit (IC) industry hasexperienced rapid growth. Technological advances in IC materials anddesign have produced generations of ICs where each generation hassmaller and more complex circuits than the previous generation. As apart of the IC evolution for semiconductor image sensors, the size ofthe radiation-sensitive pixels has been steadily reduced. As the pixelsand the separation between adjacent pixels continue to shrink, issuessuch as excessive dark current and cross-talk become more difficult tocontrol. Conventional methods of addressing the dark current andcross-talk issues, such as deep trench isolation (DTI), requireconducting an implant operation, which is likely to cause damage on theimage sensor and is confined by an implant depth limitation. As such,additional defects and interference may be induced. It would thereforebe desirable to be able to provide improved image sensor for capturingimages.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1 to 18 are diagrammatic fragmentary cross-sectional views of aback side illuminated (BSI) image sensor at various stages offabrication according to a preferred embodiment of the disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the disclosure.Specific examples of components and arrangements are described below tosimplify the present disclosure. These are, of course, merely examplesand are not intended to be limiting. For example, the formation of afirst feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Notwithstanding that the numerical ranges and parameters setting forththe broad scope of the disclosure are approximations, the numericalvalues set forth in the specific examples are reported as precisely aspossible. Any numerical value, however, inherently contains certainerrors necessarily resulting from the standard deviation found in therespective testing measurements. Also, as used herein, the term “about”generally means within 10%, 5%, 1%, or 0.5% of a given value or range.Alternatively, the term “about” means within an acceptable standarderror of the mean when considered by one of ordinary skill in the art.Other than in the operating/working examples, or unless otherwiseexpressly specified, all of the numerical ranges, amounts, values andpercentages such as those for quantities of materials, durations oftimes, temperatures, operating conditions, ratios of amounts, and thelikes thereof disclosed herein should be understood as modified in allinstances by the term “about.” Accordingly, unless indicated to thecontrary, the numerical parameters set forth in the present disclosureand attached claims are approximations that can vary as desired. At thevery least, each numerical parameter should at least be construed inlight of the number of reported significant digits and by applyingordinary rounding techniques. Ranges can be expressed herein as from oneendpoint to another endpoint or between two endpoints. All rangesdisclosed herein are inclusive of the endpoints, unless specifiedotherwise.

FIGS. 1 to 17 are diagrammatic fragmentary cross-sectional views of aback side illuminated (BSI) image sensor at various stages offabrication according to a preferred embodiment of the disclosure. TheBSI image sensor includes an array or grid of pixels for sensing andrecording an intensity of radiation (such as light) directed toward aback-side of the BSI image sensor. In some embodiments, the BSI imagesensor may include a complementary metal oxide semiconductor (CMOS)image sensor (CIS), an active-pixel sensor (APS), or a passive-pixelsensor. The BSI image sensor further includes additional circuitry andinput/outputs that are provided adjacent to the grid of pixels forproviding an operation environment for the pixels and for supportingexternal communication with the pixels. It is understood that FIGS. 1 to17 have been simplified for a better understanding of the inventiveconcepts of the present disclosure and may not be drawn to scale.

With reference to FIG. 1, a substrate 102 is provided. The substrate 102is a silicon substrate doped with a p-type dopant such as Boron, andthus serves as a p-type substrate. Alternatively, the substrate 102includes another suitable semiconductor material. For example, thesubstrate 102 may be a silicon substrate that is doped with an n-typedopant such as phosphorous or arsenic, and thus serves as an n-typesubstrate. Moreover, the substrate 102 may include other elementarysemiconductors such as germanium and diamond. The substrate 102 mayoptionally include a compound semiconductor and/or an alloysemiconductor. In this embodiment, a lightly doped p-type epitaxiallayer (p-epi layer) 104 and a heavily doped p-epi layer 106 areconsecutively formed over a front side of the substrate 102. On theheavily doped p-epi layer 106, an n-type epitaxial layer (n-epi layer)108 is formed.

Please note that dopant concentration of each layer is illustrated by aplot beside the layers 102 to 108, wherein the dopant concentration isindicated by its logarithm value to base 10. For instance, p-type dopantconcentration of the substrate 102 and the heavily doped p-epi layer 106is greater than about 10¹⁸ cm⁻³; p-type dopant concentration of thelightly doped p-epi layer 104 is less than about 10¹⁶ cm⁻³; and n-typedopant concentration of the n-epi layer 108 is from about 10¹⁴ cm⁻³ toabout 10¹⁷ cm⁻³.

The n-epi layer 108 has a front side (also referred to as a frontsurface) 10 and a back side (also referred to as a back surface) 12. Fora BSI image sensor such as the image sensor of the present embodiment,radiation is projected from the back side 12 after thinning down andenters the remaining epi layer through the back surface 12. In anembodiment, an initial thickness of the substrate 102 is from about 800microns (um) to about 1000 um; an initial thickness of the lightly dopedp-epi layer 104 is from about 0.1 um to about 0.3 um; an initialthickness of the heavily doped p-epi layer 106 is from about 0.1 um toabout 0.2 um; and an initial thickness of the n-epi layer 108 is fromabout 2.5 um to about 15 um. The dimensions described above areexemplary only and the layers 102 to 108 are not limited thereto in thepresent disclosure. Similar structures applied in other applicationsalso fall within the contemplated scope of the present disclosure.

Referring to FIG. 2, a thermal oxidation layer 302 is formed on thefront side 10 of the n-epi layer 108 through a thermal oxidationoperation at a temperature ranging from approximately 800° C. toapproximately 1050° C. using one of oxygen (O₂) gas and water (H₂O) gas.A thickness of the thermal oxidation layer 302 may be of a rangeapproximately from 100 to 1000 angstrom. However, this is not alimitation of the present disclosure.

Next, as shown in FIG. 3, a photo resist pattern 402 is formed over thethermal oxidation layer 302. The photo resist pattern 402 serves as anetching mask for a subsequent etching step. In particular, the photoresist pattern 402 leaves a portion of the thermal oxidation layer 302exposed.

Referring to FIG. 4, the thermal oxidation layer 302 is isotropicallyetched to form an opening 502. For example, the isotropic etching may becarried out by wet-etching the thermal oxidation layer 302, using ahydroflourine (HF) based etchant. In this example, the etchant hasselectivity such that the photo resist pattern 402 is not attacked. Theetch time and etch rate of the etchant may be controlled to achieve adesired radius of curvature for the concavity and therefore, are amatter of design choice. After etching, the photo resist pattern 402 isremoved, resulting in a patterned thermal oxidation layer 3022.

Next, a heavily doped n-epi layer is deposited. The deposition may beproduced by two consecutive steps, including a selectively in-situdoping step followed by a non-selective in-situ doping step. FIG. 5shows the structure of the BSI image sensor after deposition of aselectively in-situ doped n-epi layer 6022. In specific, n-type epitaxyis selectively formed on the n-epi layer 108 in the opening 502. Afterthe opening 502 is substantially filled by n-type epitaxy, thenon-selective in-situ doping step is performed to cover the patternedthermal oxidation layer 3022 and the selectively in-situ doped n-typeepitaxy 6022 by n-type polysilicon and n-type epitaxy of a certainthickness, so as to complete the formation of the n-epi layer. FIG. 6shows the structure of the BSI image sensor after deposition of anon-selectively in-situ doped n-epi layer 6023. The non-selectivelyin-situ doped n-epi layer 6023 includes n-type polysilicon regions 6026and an n-type epitaxy region 6024. The selectively in-situ doped n-typeepitaxy 6022 and the non-selectively in-situ doped n-epi layer 6023 arecommonly referred to be an n-epi layer 602 for brevity. In someembodiments, the n-epi layer 602 may be alternatively produced by usinga split poly approach followed by an ion implant step. Subsequently, asshown in FIG. 7, a portion of the n-epi layer 602, particularly thepolysilicon portion above the patterned thermal oxidation layer 3022, isetched away through an etching operation according to a photo resistpattern applied thereto.

With reference to FIG. 8, an oxidation film 802 having a certainthickness is deposited to cover the n-epi layer 602 by way of a thermaloxidation, a chemical vapor deposition (CVD) process or a plasmaenhanced chemical vapor deposition (PECVD) process. An etching processmay be performed to obtain front side deep trench isolation (DTI)structures 804 down to the lightly doped p-epi layer 104, therebyisolating photodiodes of each individual pixel. In this embodiment, theetching process includes a dry etching process. An etching mask (forexample a hard mask, not illustrated herein) may be formed before theetching process is performed to define the size and location of the DTIstructures 804.

Two of such DTI structures are illustrated in FIG. 8 as the trenches 804for the sake of providing an illustration. The trenches 804 may beformed to have a rectangular shape, somewhat a trapezoidal shape, oranother suitable shape. The trenches 804 go through the patternedthermal oxidation layer 3022, the n-epi layer 108, the heavily dopedp-epi layer 106, and extends into the lightly doped p-epi layer 104.

Referring now to FIG. 9, an epitaxy growth on the exposed surfacesincluding the sidewalls and bottoms of the trenches 804 may beimplemented by utilizing a silane (SiH₄) gas and further another gas (orgases) under a proper pressure to introduce dopants. A p+-epi layer 902is formed in a conformal manner around the trenches 804 according to oneembodiment of the present disclosure. Boundaries or interfaces betweenthe p+-epi layer 902 and the n-epi layer 108 are p-n junctions 806 thatform a photodiode structure for an image pixel. The conformal shape ofthe p+-epi layer 902 may mean that the profile of the p+-epi layer 902follows or takes on the profile of its corresponding trench 804. Thedopants are introduced into the p+-epi layer 902 by in-situ epitaxygrowth. In specific, a selective epitaxy operation is employed in thepresent disclosure. The selective epitaxy operation involves tworeactions: deposition and etching. They occur simultaneously atdifferent reaction rates on Si and on dielectric (oxide) surface. Anepitaxy operation results in deposition only on Si surfaces and nogrowth on dielectric areas by changing the concentration of an etchantgas.

The p+-epi layer 902 is a boron doped epitaxy layer according to thisembodiment. However, this is not a limitation of the disclosure. Othersuitable materials applied in other applications also fall within thecontemplated scope of the present disclosure. The boron doped epi layer902 can be formed near the sidewall and the bottom of the trenches 804at a concentration of more than about 10¹⁷ cm⁻³. Compared to an existingprocess, DTI without the use of high energy implants can reduce thechance of introducing defects to the pinned photodiode structure andallows for the formation of a much deeper P-N junction compared to theone formed by ion implantation. Very deep junction may be beneficial forthe near infrared (NIR) sensor.

In some embodiments, a solid material may be utilized to carry outdopant diffusion so as to form the conformal-shaped doped layer 902.Where the dopant diffusion is done using a solid material, it may bereferred to as a solid phase doping method. For example,dopant-containing layers (not shown in FIG. 9) are first formed on theexposed surfaces (including the sidewalls) of the trenches 804. Thedopant-containing layers include Boron-Silicate Glass (BSG). Theformation of the BSG material may utilize Tetraethyl Orthosilicate(TEOS) as a precursor. The formation of the BSG material may alsoinvolve the use of an Ozone gas (O3). For the Ozone TEOS BSG dopingembodiment, a dopant drive-in process may be performed to facilitatedopant diffusion from the dopant-containing layers into the surroundingregions of the tranches 804 because it's a thermal process without Argonor Helium bombardment. In some embodiments, the dopant drive-in processincludes a thermal process, such as a Rapid Annealing Process (RTA). TheRTA process may be performed at a process temperature greater than about1000 degrees Celsius for a process duration of about 5 to 15 seconds. Asa result of the dopant drive-in process, the p+-type doped layer 902 isformed through the diffusion of the dopant material (e.g., Boron for theillustrated embodiment) from the dopant-containing layers into thesurrounding regions of the trenches 804.

In some embodiments, a gas phase doping method may be employed to formthe conformal-shaped doped layer 902. To this end, no dopant-containinglayer is formed in the trenches 804. A dopant-containing gas is used todiffuse a dopant into regions of the silicon surrounding the trenches804. Similar to the dopant-containing layer, the dopant-containing gasalso includes a dopant material having p-type doping polarity. Thus, inthe illustrated embodiment, the dopant-containing gas contains Boron. Insome embodiments, the dopant-containing gas includes Triethylborane(TEB). The dopant diffusion from the dopant-containing gas into theregions of the silicon surrounding the trenches 804 also causes thedoped regions 902 to be formed in a conformal manner around the trenches804. Since the dopant diffusion is carried out using a gas materialrather than a solid material, the embodiment discussed above may bereferred to as a gas phase doping method.

Referring now to FIG. 10, after the high concentration boron doped epilayer 902 is formed using either the selective in-situ operation, solidphase doping method or the gas phase doping method, a dielectricmaterial is deposited to fill the trenches 804 and cover the patternedthermal oxidation layer 3022, resulting in a dielectric region 1002approximately flush with the oxidation film 802. However, this is not alimitation of the present disclosure. In some embodiments, thedielectric region 1002 may not be flush with the oxidation layer 802.Moreover, the dielectric material mentioned above includes siliconoxide, silicon nitride, silicon oxynitride, a low-k dielectric, oranother suitable dielectric material.

Next, a planarization process (e.g., chemical mechanical polishing, orCMP) or an etching process (e.g., wet etching with dilute aqueous HF orbuffered HF, or selective dry etching using a fluorocarbon etchant) isemployed to expose the n-epi layer 602 as depicted in FIG. 11. To thisend, a top portion of the oxidation film 802 and the dielectric region1002 is grounded off or etched away. The n-epi layer 602 includes thepolysilicon portions approximately above the patterned thermal oxidationlayer 3022 and includes the n-type epitaxy portion formed directly onthe n-epi layer 108.

An RTA process may be performed again to drive n-type dopant to diffusefrom the p+-type doped layer 902 into neighboring regions of the n-epilayer 108, and to drive p-type dopant to diffuse from the n-epi layer602 to neighboring regions of the n-epi layer 108. In this way, a gradedtransition from the p-type doping to the n-type doping is thereforeformed; and the heavily doped n-epi layer 602 and the n-epi layer 108 asa whole can therefore become a graded epitaxial layer. A function of then-epi layer 602 is to provide a contact for a terminal of the p-njunctions 806. To this end, the top surface of the n-epi layer 602 maybe further silicided to form a contact silicide 1202. Thereby theconductivity of the n-epi layer 602 can be further increased, which isadvantageous to the image sensing operation. Addition of the silicide1202 may also be beneficial for the absorption of light emitted byactive CMOS circuitry under the photo diode pixel. FIG. 12 shows theconfiguration of the contact silicide 1202 according to an embodiment ofthe disclosure. After the contact silicide 1202 is formed, anotherdielectric material 1302 is deposited over the front side of thephotodiode structure in order to cover the n-epi layer 602 as shown inFIG. 13.

Please refer to FIG. 14. An etching process is performed on a portion ofa front side 1304 in order to remove undesired dielectric material,thereby forming deep trenches 1402 and a shallow trench 1404. The p+-epilayer 902 is therefore exposed at side walls and bottoms of the deeptrenches 1402. A portion of the contact silicide 1202 is also exposed ata bottom of the shallow trench 1404. After the deep trenches 1402 andthe shallow trench 1404 are formed, a liner layer may be applied to abottom and side walls of the deep trenches 1402 and the shallow trench1404. Next, the deep trenches 1402 and the shallow trench 1404 arefilled by depositing metal, for example, tungsten, forming the metalregions 1502 and 1504 as shown in FIG. 15. The shallow trench 1404serves as a plug for coupling the p terminal of the p-n junctions 806 tooutside circuitry; and the deep trenches 1402 serve as plugs forcoupling the n terminal of the p-n junctions 806 to a reference voltage,such as a ground voltage. It should be noted that the etched trench 1402may also extend just enough to touch the top portion of the n-epi layer108. In this case, most of the DTI structure 804 is still filled withoxide and the p+-epi layer 902 is formed only at the top of the sidewallof the trench 804.

After the metal deposition, an etch, for example, a dry etch, or CMP iscarried out for removing residual metal on the top surface of the frontside 1304. Additional fabrication processes may be performed to completethe fabrication of the BSI image sensor, as discussed below. Referringto FIG. 16, an interconnect structure 1602 is formed over the front side1304. The interconnect structure 1602 includes a plurality of patterneddielectric layers and conductive layers that provide interconnections(e.g., wiring) between the various doped features, circuitry, andinput/output of the BSI image sensor. The interconnect structure 1602includes an interlayer dielectric (ILD) 1604 and a multilayerinterconnect (MLI) structure 1606. The MLI structure 1606 includescontacts, vias and metal lines. It is understood that the MLI structureshown in FIG. 16 is merely for illustrative purpose, and the actualpositioning and configuration of the conductive lines and vias/contactsmay vary depending on design needs and manufacturing concerns.

The MLI structure 1606 may include conductive materials such asaluminum, aluminum/silicon/copper alloy, titanium, titanium nitride,tungsten, polysilicon, metal silicide, or combinations thereof, beingreferred to as aluminum interconnects. Aluminum interconnects may beformed by a process including physical vapor deposition (PVD) (orsputtering), CVD, atomic layer deposition (ALD), or combinationsthereof. Other manufacturing techniques to form the aluminuminterconnect may include photolithography processing and etching topattern the conductive materials for vertical connection and horizontalconnection. Alternatively, a copper multilayer interconnect may be usedto form the metal patterns. The copper interconnect structure mayinclude copper, copper alloy, titanium, titanium nitride, tantalum,tantalum nitride, tungsten, polysilicon, metal silicide, or combinationsthereof. The copper interconnect structure may be formed by a techniqueincluding CVD, sputtering, plating, or other suitable processes.

Still referring to FIG. 16, a buffer layer 1608 is formed on theinterconnect structure 1602. In the present embodiment, the buffer layer1608 includes a dielectric material such as silicon oxide.Alternatively, the buffer layer 1608 may optionally include siliconnitride. The buffer layer 1608 is formed by CVD, PVD, or other suitabletechniques. The buffer layer 1608 is planarized to form a smooth surfaceby a CMP process.

Thereafter, a carrier substrate 1610 is bonded to the buffer layer 1608,so as to facilitate processing of the back side of the BSI image sensor.The carrier substrate 1610 in the present embodiment includes a siliconmaterial. Alternatively, the carrier substrate 1610 may include a glasssubstrate or another suitable material. The carrier substrate 1610 maybe bonded to the buffer layer 1608 by molecular forces—a technique knownas direct bonding or optical fusion bonding—or by other bondingtechniques known in the art, such as metal diffusion or anodic bonding.

The buffer layer 1608 provides electrical isolation and protection forthe various features formed on the front side of the BSI image sensor.The carrier substrate 1610 also provides mechanical strength and supportfor processing of the back side of the BSI image sensor as discussedbelow. After the carrier substrate 1610 is bonded, a thinning process isthen performed to thin the BSI image sensor from the backside in FIG.17. The thinning process may include a mechanical grinding process and achemical thinning process. A substantial amount of substrate materialmay be first removed from the substrate 102 during the mechanicalgrinding process. Afterwards, the chemical thinning process may apply anetching chemical to the back side of the image sensor to further removethe remaining portion of the substrate 102, the lightly doped p-epilayer 104, the heavily doped p-epi layer 106 and a portion of the n-epilayer 108.

Referring to FIG. 18, a color filter layer 1802 may be formed on theback side of the BSI image sensor. In this embodiment, the color filterlayer 1802 contains a plurality of color filters positioned such thatthe incoming radiation is directed thereon and therethrough. The colorfilters includes a dye-based (or pigment based) polymer or resin forfiltering a specific wavelength band of the incoming radiation, whichcorresponds to a color spectrum (e.g., red, green, and blue).Thereafter, a micro-lens layer 1804 containing a plurality ofmicro-lenses is formed over the color filter layer 1802. Themicro-lenses direct and focus the incoming radiation toward specificradiation-sensing regions in the BSI image sensor, such as photodiodes.The micro-lenses may be positioned in various arrangements and havevarious shapes depending on a refractive index of a material used forthe micro-lens and distance from a sensor surface.

It is understood that the sequence of the fabrication processesdescribed above is not intended to be limiting. Some of the layers ordevices may be formed according to different processing sequences inother embodiments than what is shown herein. Furthermore, some otherlayers may be formed but are not illustrated herein for the sake ofsimplicity. For example, an anti-reflection coating (ARC) layer may beformed over the back side of the BSI image sensor before the formationof the color filter layer 1802 and/or the micro-lens layer 1804.

It is also understood that the discussions above pertain mostly to apixel region of the BSI image sensor. In addition to the pixel region,the image sensor also includes a periphery region, a bonding pad region,and a scribe line region. The periphery region may include devices thatneed to be kept optically dark. These devices may include digitaldevices, such as application-specific integrated circuit (ASIC) devicesor system-on-chip (SOC) devices, or reference pixels used to establish abaseline of an intensity of light for the BSI image sensor. The bondingpad region is reserved for the formation of bonding pads, so thatelectrical connections between the BSI image sensor and external devicesmay be established. The scribe line region includes a region thatseparates one semiconductor die from an adjacent semiconductor die. Thescribe line region is cut therethrough in a later fabrication process toseparate adjacent dies before the dies are packaged and sold asintegrated circuit chips. For the sake of simplicity, the details ofthese other regions of the BSI image sensor are not illustrated ordescribed herein.

The above discussions also pertain to a BSI image sensor. However, it iscontemplated that the various aspects of the present disclosure may beapplied to a front side illuminated (FSI) image sensor as well. Forexample, the FSI image sensor also uses pixels similar to the pixelsdiscussed herein to detect light, though the light is projected (andenters the substrate) from the front side, rather than the back side.The FSI image sensor does not involve wafer back side thinningprocesses, and will instead form the color filters and micro-lenses onthe front side. The interconnect structure is implemented in a manner soas to not impede or obstruct the path of incident light projected fromthe front side. It can be seen that the doped isolation regions may alsobe formed conformal to the dielectric trenches between neighboringpixels using the solid phase or the gas phase dopant diffusion methodsdiscussed herein. As is the case for the BSI image sensor, the conformaldoped isolation regions may also enhance the dark current and cross-talkperformance of the FSI image sensor. For the sake of simplicity, theprocessing details of the FSI image sensor are not discussed herein.

The conceptual disclosure provides a novel image sensor structure thatprecludes the use of ion implantation in the formation of a DTI. As aconsequence, several issues introduced by ion implantation can bemitigated.

Some embodiments of the present disclosure provide an image sensor. Theimage sensor includes an epitaxial layer, a plurality of plug structuresand an interconnect structure. Wherein the plurality of plug structuresare formed in the epitaxial layer, and each plug structure has dopedsidewalls, the epitaxial layer and the doped sidewalls form a pluralityof photodiodes, the plurality of plug structures are used to separateadjacent photodiodes, and the epitaxial layer and the doped sidewallsare coupled to the interconnect structure via the plug structures.

In some embodiments of the present disclosure, the epitaxial layer has adoping polarity different from a doping polarity of the doped sidewalls.

In some embodiments of the present disclosure, the doped sidewalls areformed by in-situ epitaxy growth.

In some embodiments of the present disclosure, the doped sidewalls areformed by solid phase doping.

In some embodiments of the present disclosure, the doped sidewalls areformed by gas phase doping.

In some embodiments of the present disclosure, the doped sidewalls arein a conformal manner.

In some embodiments of the present disclosure, the image sensor includesa back side illuminated (BSI) image sensor.

In some embodiments of the present disclosure, the plug structures arefilled by depositing metal.

Some embodiments of the present disclosure provide an image sensor. Theimage sensor includes a first-type doped epitaxial layer, a plugstructure, an interconnect structure and a micro-lens. Wherein the plugstructure is formed through the first-type doped epitaxial layer, theplug structure is filled by metal and has second-type doped sidewalls,the interconnect structure is coupled to a side of the first-type dopedepitaxial layer, the micro-lens is formed over another side of thefirst-type doped epitaxial layer, the first-type and the second-type aredifferent polarities, and a boundary of the first-type doped epitaxiallayer and the second-type doped sidewalls of the plug structure jointlyform a p-n junction of a photodiode.

In some embodiments of the present disclosure, the image sensor furtherhas another plug structure formed through the first-type doped epitaxiallayer, the another plug structure is filled by metal and has second-typedoped sidewalls, and an image pixel of the image sensor is formedbetween the plug structure and the another plug structure.

In some embodiments of the present disclosure, the doped sidewalls areformed by in-situ epitaxy growth.

In some embodiments of the present disclosure, the doped sidewalls areformed by solid phase doping.

In some embodiments of the present disclosure, the doped sidewalls areformed by gas phase doping.

In some embodiments of the present disclosure, the image sensor includesa back side illuminated (BSI) image sensor.

Some embodiments of the present disclosure provide a method. The methodincludes: providing a substrate having a first-type doped epitaxialsubstrate layer on a second-type doped epitaxial substrate layer;forming a plurality of isolation trenches in the first-type dopedepitaxial substrate layer; forming a second-type doped region alongsidewalls and bottoms of the plurality of isolation trenches; andfilling the plurality of isolation trenches by depositing metal.

In some embodiments of the present disclosure, the first-type dopedepitaxial substrate layer has a doping polarity different from a dopingpolarity of the second-type doped region.

In some embodiments of the present disclosure, forming the second-typedoped region along sidewalls of the plurality of isolation trenchesincludes performing in-situ second-type doped epitaxy growth along thesidewalls and bottoms of the plurality of isolation trenches.

In some embodiments of the present disclosure, forming the second-typedoped region along sidewalls of the plurality of isolation trenchesincludes performing solid phase second-type doping.

In some embodiments of the present disclosure, forming the second-typedoped region along sidewalls of the plurality of isolation trenchesincludes performing gas phase second-type doping.

In some embodiments of the present disclosure, the method furtherincludes forming a interconnect structure coupled to the first-typedoped epitaxial substrate layer and the plurality of isolation trenches.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. An image sensor, comprising: an epitaxial layerhaving a front side and a back side; an interconnect structure at thefront side of the epitaxial layer; a color filter layer in physicalcontact with the back side of the epitaxial layer; and a plurality ofplug structures formed in the epitaxial layer, the plug structuresextending to a higher level than the front side of the epitaxial layerand in physical contact with the interconnect structure at one end, andbeing level with the back side of the epitaxial layer and in physicalcontact with the color filter at the other end, and the plug structureshaving doped sidewalls formed around the plug structures, all the dopedsidewalls being of the same type of doping; wherein the epitaxial layerand the doped sidewalls form a plurality of photodiodes, the pluralityof plug structures are used to separate adjacent photodiodes, and theepitaxial layer and the doped sidewalls are coupled to the interconnectstructure via the plug structures.
 2. The image sensor of claim 1,wherein the epitaxial layer has a doping polarity different from adoping polarity of the doped sidewalls.
 3. The image sensor of claim 1,wherein the doped sidewalls are formed by in-situ epitaxy growth.
 4. Theimage sensor of claim 1, wherein the doped sidewalls are formed by solidphase doping.
 5. The image sensor of claim 1, wherein the dopedsidewalls are formed by gas phase doping.
 6. The image sensor of claim1, wherein the doped sidewalls are in a conformal manner.
 7. The imagesensor of claim 1, wherein the image sensor includes a back sideilluminated (BSI) image sensor.
 8. The image sensor of claim 1, whereinthe plug structures are filled by depositing metal.
 9. An image sensor,comprising: a first-type doped epitaxial layer having a front side and aback side; an interconnect structure at the front side of the epitaxiallayer; a color filter layer in physical contact with the back side ofthe epitaxial layer; and a plug structure formed through the first-typedoped epitaxial layer, and the plug structure being filled by metal andhaving second-type doped sidewalls conformally formed around the plugstructure, and the plug structures extending to a higher level than thefront side of the first-type doped epitaxial layer and in physicalcontact with the interconnect structure at one end, and being level withthe back side of the first-type doped epitaxial layer and in physicalcontact with the color filter at the other end; a micro-lens formed overthe back side of the first-type doped epitaxial layer; wherein thefirst-type and the second-type are different polarities, and a boundaryof the first-type doped epitaxial layer and the second-type dopedsidewalls of the plug structure jointly form a p-n junction of aphotodiode.
 10. The image sensor of claim 9, wherein the image sensorfurther has another plug structure formed through the first-type dopedepitaxial layer, the another plug structure is filled by metal and hassecond-type doped sidewalls, and an image pixel of the image sensor isformed between the plug structure and the another plug structure. 11.The image sensor of claim 9, wherein the doped sidewalls are formed byin-situ epitaxy growth.
 12. The image sensor of claim 9, wherein thedoped sidewalls are formed by solid phase doping.
 13. The image sensorof claim 9, wherein the doped sidewalls are formed by gas phase doping.14. The image sensor of claim 9, wherein the image sensor includes aback side illuminated (BSI) image sensor.
 15. A method of fabricating animage sensor, comprising: providing a substrate having a first-typedoped epitaxial substrate layer on a second-type doped epitaxialsubstrate layer, wherein the substrate has a front side and a back side,wherein a first-type doping concentration of an entire surface of thefront side is evenly distributed at the entire surface of the front sideand continuously decreases from the front side to the back side; forminga plurality of isolation trenches in the first-type doped epitaxialsubstrate layer; forming a second-type doped region along sidewalls andbottoms of the plurality of isolation trenches; filling the plurality ofisolation trenches by depositing a dielectric material in and over theisolation trenches; removing at least a portion of the dielectricmaterial in the isolation trenches; filling the plurality of isolationtrenches by depositing metal to form a plurality of plug structures, theplug structures extending to a higher level than the front side of thesubstrate; forming an interconnect structure over the front side of thesubstrate and in physical contact with one end of the plug structures;and forming a color filter layer over the back side of the substrate andin physical contact with the other end of the plug structures.
 16. Themethod of claim 15, wherein the first-type doped epitaxial substratelayer has a doping polarity different from a doping polarity of thesecond-type doped region.
 17. The method of claim 15, wherein formingthe second-type doped region along sidewalls of the plurality ofisolation trenches comprises performing in-situ second-type dopedepitaxy growth along the sidewalls and bottoms of the plurality ofisolation trenches.
 18. The method of claim 15, wherein forming thesecond-type doped region along sidewalls of the plurality of isolationtrenches comprises performing solid phase second-type doping.
 19. Themethod of claim 15, wherein forming the second-type doped region alongsidewalls of the plurality of isolation trenches comprises performinggas phase second-type doping.
 20. The method of claim 15, whereinforming the interconnect structure over the front side of the substrateand in physical contact with one end of the plug structures comprises:forming the interconnect structure over the front side of the substrateand in physical contact with one end of the plug structures to couplethe interconnect structure with the first-type doped epitaxial substratelayer and the plurality of plug structures.